منابع مشابه
Dense-plasma Dynamics during Pulsed Laser Annealing
The flow of energy from the laser to the lattice during pulsed laser annealing of Si is examined, with particular attention paid to the influence of the dense'plasma of hot, photoexcited carriers on-the manner in which this energy transfer occurs. Consideration of carrier thermalization and recombination at high carrier densities suggests that under certain conditions carrier diffusion may incr...
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We have investigated the effect of laser irradiation on the terrace morphology of Br-covered GaAs ~110!. Layer-by-layer etching of GaAs ~110! is demonstrated through laser-induced etching and atomic desorption. Nanosecond pulsed-laser irradiation ~hn52.3 eV, pulse power ;35 mJ cm! of Br–GaAs ~110! initially produces a high density of small, single-layer etch pits as Br is consumed. Continued la...
متن کاملPhonon-assisted population inversion of a single InGaAs/GaAs quantum dot by pulsed laser excitation.
We demonstrate a new method to realize the population inversion of a single InGaAs/GaAs quantum dot excited by a laser pulse tuned within the neutral exciton phonon sideband. In contrast to the conventional method of inverting a two-level system by performing coherent Rabi oscillation, the inversion is achieved by rapid thermalization of the optically dressed states via incoherent phonon-assist...
متن کاملNanosecond time-resolved reflectivity determination of the melting of metals upon pulsed laser annealing
Thin metal fiIrns (Cu, Au, Ni) on quartz glass were illuminated with nanosecond pulse.; of a frequency doubled Nd:YAG laser (A = 532 nm). The transient reflectivity behavlour was probed at the wavelength 633 nm, where these metals exhibit Drude-Iike optical behaviour: the reflectivity decreases with temperature in the solid and in the Iiquid state as well as at the solid-llquid phase transition...
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ژورنال
عنوان ژورنال: The Review of Laser Engineering
سال: 1981
ISSN: 0387-0200,1349-6603
DOI: 10.2184/lsj.9.638